Frequency Resolved Measurements for the Characterization of MOSFET Parameters at Low Longitudinal Fields
Academic Article
Publication Date:
1995
Short description:
Frequency Resolved Measurements for the Characterization of MOSFET Parameters at Low Longitudinal Fields / Selmi, Luca; Ricco, B.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 42:2(1995), pp. 315-320. [10.1109/16.370063]
abstract:
A new technique is presented to extract the main parameters required for transistor modeling at low longitudinal fields (parasitic resistance, intrinsic conductivity factor, threshold voltage, and body factor k) from a single MOSFET. The method makes use of easy-to-perform ac frequency-resolved measurements to overcome repeatability and accuracy problems encountered with de data. The technique has been satisfactorily validated on MOSFET's down to 0.8 mu m channel length.
Iris type:
Articolo su rivista
List of contributors:
Selmi, Luca; Ricco, B.
Published in: