Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS
Articolo
Data di Pubblicazione:
2005
Citazione:
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS / Eminente, S., Esseni, D., Palestri, P., Fiegna, C., Selmi, L., Sangiorgi, E.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 52:12(2005), pp. 2736-2743. [10.1109/TED.2005.859566]
Abstract:
The on-current and its ballistic limit for MOSFETs
designed according to the 2003 International Technology
Roadmap for Semiconductors down to the 45-nm node, are evaluated
by using the full-band, self-consistent Monte Carlo simulator
with quantum–mechanical corrections described in Part I. Our
results show that quasi-ballistic transport increases for G below
approximately 50 nm and contributes most part of the ON improvements
related to scaling. Thanks to a lower vertical electric
field, double-gate silicon-on-insulator MOSFETs with ultrathin
body and low channel doping achieve performance closer to the
ballistic limit than the bulk counterparts.
designed according to the 2003 International Technology
Roadmap for Semiconductors down to the 45-nm node, are evaluated
by using the full-band, self-consistent Monte Carlo simulator
with quantum–mechanical corrections described in Part I. Our
results show that quasi-ballistic transport increases for G below
approximately 50 nm and contributes most part of the ON improvements
related to scaling. Thanks to a lower vertical electric
field, double-gate silicon-on-insulator MOSFETs with ultrathin
body and low channel doping achieve performance closer to the
ballistic limit than the bulk counterparts.
Tipologia CRIS:
Articolo su rivista
Keywords:
Back-scattering; Ballistic transport; Monte Carlo method (MC); MOSFETs; Semiconductor device modeling; Silicon- on-insulator (SOI)
Elenco autori:
Eminente, S.; Esseni, David; Palestri, Pierpaolo; Fiegna, C; Selmi, Luca; Sangiorgi, E.
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