Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics
Contributo in Atti di convegno
Data di Pubblicazione:
2008
Citazione:
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics / Rovati, Luigi; Verzellesi, Giovanni; Bonaiuti, Matteo; G., Batignani; L., Bosisio; G. F., Dalla Betta; G., Giacomini; C., Piemonte; N., Zorzi. - STAMPA. - (2008), pp. 1403-1406. ( 2008 IEEE International Instrumentation and Measurement Technology Conference, I2MTC Victoria, BC, can May 2008) [10.1109/IMTC.2008.4547262].
Abstract:
Radon dosimetry yields valuable information about radioactive health risks in closed environments. Indeed, World Health Organization (WHO) and the International Agency for Research on Cancer (IARC) have recently classified radon as a human carcinogen and have demonstrated a correlation between environmental radon concentration and lung cancer risk. Dose measurements are traditionally based on laboratory analysis of alpha-ray traces in ionization chambers exposed to environmental air. In this paper we propose a portable instrument for real-time radon alpha-ray detection based on a previously-developed high-resistivity-silicon BJT sensor and a low-cost, IC-based readout electronics.
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
Radon; silicon radiation detector; bipolar junction transistor; readout electronics.
Elenco autori:
Rovati, Luigi; Verzellesi, Giovanni; Bonaiuti, Matteo; G., Batignani; L., Bosisio; G. F., Dalla Betta; G., Giacomini; C., Piemonte; N., Zorzi
Link alla scheda completa:
Titolo del libro:
Proceedings of IMTC 2008