Comments on “Oxide-Field Dependence of Electron Injection from Silicon into Silicon Dioxide”
Articolo
Data di Pubblicazione:
1994
Citazione:
Comments on “Oxide-Field Dependence of Electron Injection from Silicon into Silicon Dioxide” / Fischetti, M. V.; Fiegna, C.; Sangiorgi, E.; Selmi, L.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 41:9(1994), pp. 1680-1683. [10.1109/16.310127]
Abstract:
In the study of electron injection from Si into S1O2 one would reach conclusions vastly different from those of the above paper when accounting for a realistic density-of-states in Si at high electron energy and employing a hetter approximation for the probability of transmission across the Si-SiO2 interface. © 1994, IEEE. All rights reserved.
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Articolo su rivista
Elenco autori:
Fischetti, M. V.; Fiegna, C.; Sangiorgi, E.; Selmi, L.
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