Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-signal and RF applications
Contributo in Atti di convegno
Data di Pubblicazione:
2006
Citazione:
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-signal and RF applications / Eminente, S.; Barin, N.; Palestri, Pierpaolo; Fiegna, C.; Sangiorgi, E.. - (2006), pp. 953-956. ( 2006 International Electron Devices Meeting, IEDM San Francisco, CA, usa 11-13 Dicembre 2006) [10.1109/IEDM.2006.346942].
Abstract:
A state of the art Monte-Carlo simulator is applied to the investigation of the RF performance of bulk MOSFETs designed according to the prescriptions of the 2005 ITRS Roadmap for analog and mixed signal applications, and of a 53 nm ultra-thin-body (UTB) single-gate (SG) SOI MOSFET. We provide an analysis of the signal-delay build-up along the channel and an investigation of the scaling properties of the parameters of the AC equivalent circuit, the transition frequency FT, and the 3dB bandwidth of the voltage gain in common-source configuration. The effects of ballistic transport and their impact on the AC figures of merit are investigated for short UTB double-gate MOSFETs
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Eminente, S.; Barin, N.; Palestri, Pierpaolo; Fiegna, C.; Sangiorgi, E.
Link alla scheda completa:
Titolo del libro:
International Electron Devices Meeting (IEDM)
Pubblicato in: