TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections
Articolo
Data di Pubblicazione:
2017
Citazione:
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections / Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Palestri, Pierpaolo; Reggiani, Susanna; Gnani, Elena. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 64:12(2017), pp. 4882-4888. [10.1109/TED.2017.2759420]
Tipologia CRIS:
Articolo su rivista
Keywords:
ballistic transport; double-gate (DG) FET; III-V semiconductors; mobility; MOSFET; Electronic; Optical and Magnetic Materials; Electrical and Electronic Engineering
Elenco autori:
Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Palestri, Pierpaolo; Reggiani, Susanna; Gnani, Elena
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