Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States
Contributo in Atti di convegno
Data di Pubblicazione:
2012
Citazione:
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States / Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca; G., Bersuker. - STAMPA. - (2012), pp. 274-277. ( 42nd European Solid-State Device Research Conference, ESSDERC 2012 Bordeaux, fra Sept. 17-21) [10.1109/ESSDERC.2012.6343386].
Abstract:
In this paper we analyze Random Telegraph Signal (RTS) noise in hafnium-based RRAMs. RTS is measured in HRS, showing fast and slow multilevel switching events. RTS characteristics are examined through novel color-coded time-lag plots and Hidden Markov Model (HMM) time-series analyses. Noise is examined at different reset conditions to provide new insights on conduction mechanisms in HRS. Higher reset voltages result in an enhanced complexity in RTS due to a larger number of active traps
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
RRAM; RRAM modeling; HMM; Time Lag Plots
Elenco autori:
Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca; G., Bersuker
Link alla scheda completa:
Titolo del libro:
Proceedings of the 42nd European Solid-State Device Research Conference
Pubblicato in: