CHINI Alessandro

Alessandro Chini was born in Rovereto, Italy, in 1975. He graduated in electronics engineering at the University of Padova, Italy, in 1999 working on the characterization of impact ionization phenomena in InP-based pnp heterojunction bipolar transistors. In 2001 he was at the University of California Santa Barbara, working on the fabrication and characterization of GaN-based HEMTs. In 2003 he received the Ph.D. degree in electrical and telecommunication engineering from the University of Padova working on the fabrication, characterization, and reliability of GaN-based HEMTs for microwave power applications. From 2003 until 2004, he was an Assistant Research Engineer at the Department of Electrical and Computer Engineering, University of California Santa Barbara working on the fabrication and development of GaN HEMTs for microwave power applications focusing on the development of passivation techniques for improving the device output power and reliability as well as developing field-plated devices for higher output power densities. Since 2004 he has been with the Department of Engineering “Enzo Ferrari” of the University of Modena and Reggio Emilia where he is currently a Full Professor of Electronic.