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Pubblicazioni

SOLID-STATE ELECTRONICS

Rivista

Codice:

E156883

ISSN:

0038-1101

Dati Generali

Dati Generali

Pubblicazioni (85)

Ordina Pubblicazioni:

ascendente
decrescente

A MANY-BAND SILICON MODEL FOR HOT-ELECTRON TRANSPORT AT HIGH-ENERGIES

Articolo

A New High Injection Efficiency Non Volatile Memory Cell: BipFlash

Articolo

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Articolo

A new analytical model for the energy dispersion in two-dimensional hole inversion layers

Articolo

A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section

Articolo

A study on HfO2 RRAM in HRS based on I–V and RTN analysis

Articolo

An Improved Semi-Classical Monte Carlo Approach for Nano-MOSFET Simulation

Articolo

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

Articolo

Analysis of quantum features in transport theory from a quantum monte carlo approach

Articolo

Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs

Articolo

Anomalous random telegraph noise and temporary phenomena in resistive random access memory

Articolo

Assessment of dual-oxide options for LDMOS transistors in FinFET technology

Articolo

Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits

Articolo

Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials

Articolo

Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ?

Articolo

Carbon-doped GeTe: A promising material for Phase-Change Memories

Articolo

Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K

Articolo

Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells

Articolo

Defects in polysilicon channel: Insight from first principles and multi-scale modelling

Articolo

Digital and analog TFET circuits: Design and benchmark

Articolo

Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study

Contributo in Atti di convegno

Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study

Articolo

ELECTRONIC-STRUCTURE OF THIN SI LAYERS IN CAF2 - HYBRIDIZATION VERSUS CONFINEMENT

Articolo

Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon

Articolo

Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022)

Articolo

Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices

Articolo

Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs

Articolo

Experimental Application of a Novel Technique to Extract Gate Bias Dependent Source and Drain Parasitic Resistances of GaAs MESFETs

Articolo

Experimental demonstration of improved analog device performance of nanowire-TFETs

Articolo

Experimental evaluation of the minimum detectable outdiffusion length for AlGaAs/GaAs HBTs

Articolo

Foreword

Articolo

Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors

Articolo

Grain boundary-driven leakage path formation in HfO2 dielectrics

Articolo

High-k/InGaAs interface defects at cryogenic temperature

Articolo

Hot phonons in quantum wells system

Articolo

Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs

Articolo

Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs

Articolo

Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O-2 plasma treatment

Articolo

Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model

Articolo

Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques

Articolo

Junction heterostructures for high performance electronics

Articolo

Layout effects on the thermal metrics of multichannel FinFETs

Articolo

Long term charge retention dynamics of SONOS cells

Articolo

Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors

Articolo

Magneto-acoustic phonon antiresonances in Wannier-Stark superlattices

Articolo

Mobility extraction in SOI MOSFETs with sub 1 nm body thickness

Articolo

Modeling and optimization of graphene ballistic rectifiers

Articolo

Modelling the Uniform Transport in Thin Film SOI MOSFETs with a Monte Carlo Simulator for the 2D Electron Gas

Articolo

Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors

Articolo

Monte Carlo analysis of hot electron injection in the passivation layer of GaN HEMTs

Articolo

Monte-Carlo Simulation of Decananometric nMOSFETs: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections

Articolo

Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs

Articolo

Monte-Carlo simulation of MOSFETs with band offsets in the source and drain

Articolo

Multi-Subband Monte Carlo simulations of ION degradation due to fin thickness fluctuations in FinFETs

Articolo

NROM (TM) - a new technology for non-volatile memory products

Articolo

Negative Vbe shift due to base dopant outdiffusion in DHBT

Articolo

Noise behavior in SiGe devices

Articolo

Non-local microscopic view of signal propagation times in BJTs biased up to high currents

Articolo

Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements

Articolo

OPTICAL PHONON PROBES OF THE LATERAL SCALE OF INTERFACE ROUGHNESS - A THEORETICAL INVESTIGATION

Articolo

On the accuracy of current TCAD hot carrier injection models in nanoscale devices

Articolo

On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise

Contributo in Atti di convegno

On the electron mobility enhancement in biaxially strained Si MOSFETs

Articolo

On the extraction of the channel current in permeable gate oxide MOSFETs

Articolo

On the interpretation of MOS impedance data in both series and parallel circuit topologies

Articolo

Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization

Articolo

PHONONS AND ELECTRON-PHONON INTERACTION IN GAAS QUANTUM WIRES

Articolo

RTS Noise Characterization of HfOx RRAM in High Resistive State

Articolo

STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing

Articolo

Selected papers from ESSDERC 2014

Articolo

Selected papers from the EUROSOI-ULIS conference

Articolo

Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach

Articolo

Simple and efficient modeling of the E–k relationship and low-field mobility in Graphene Nano-Ribbons

Articolo

Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model

Articolo

Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing

Articolo

Solid-State Electronics: Foreword

Articolo

Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS

Articolo

THEORETICAL-ANALYSIS OF RESONANT MAGNETOTUNNELING SPECTROSCOPY OF HOLES

Articolo

The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs

Articolo

The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs

Articolo

Topology investigation for the low frequency noise compact modelling of bipolar transistors

Articolo

Transient hot-phonon effects on the velocity overshoot of GaAs: a Monte Carlo analysis

Articolo

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

Articolo

V-grooved quantum wires as prototypes of 1D-systems: Single particle properties and correlation effects

Articolo

VIBRATIONAL PROPERTIES OF SI/GE SUPERLATTICES - THEORY AND INPLANE RAMAN-SCATTERING EXPERIMENTS

Articolo

No Results Found

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