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Pubblicazioni

MICROELECTRONICS RELIABILITY

Rivista

Codice:

E109979

ISSN:

0026-2714

Dati Generali

Dati Generali

Pubblicazioni (74)

Ordina Pubblicazioni:

ascendente
decrescente

A comparison between normally and highly accelerated electromigration tests

Articolo

A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines

Articolo

A stochastic approach to failure analysis in electromigration phenomena

Articolo

A study of hot electron degradation effects in pseudomorphic HEMTs

Articolo

Ambipolar field-effect transistor based on a,x-dihexylquaterthiophene and a,x -diperfluoroquaterthiophene vertical heterojunction

Articolo

Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations

Articolo

Analysis of dc and ac anomalous latch-up effects in commercial CMOS integrated circuits

Articolo

Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation

Articolo

Anodic Gold corrosion in plastic encapsulated devices

Articolo

Are high resolution resistometric methods really useful for early detection of electromigration damage?

Articolo

Bipolar Schottky logic device failure modes due to contact metallurgical degradation

Articolo

CMOS reliability: a useful case history to revise extrapolation effectiveness, lenght and slope of the learning curve

Articolo

Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs

Articolo

Correlation between light emission and currents in pseudomorphic HEMTs

Articolo

DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues

Articolo

Degradation based long-term reliability assessment for electronic components in submarine applications

Articolo

Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications

Articolo

Design of a test structure to evaluate electro-thermomigration in power ICs

Articolo

EPROM testing - part I: theoretical considerations

Articolo

EPROM testing - part II: application to 16K N-channel devices

Articolo

ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements

Articolo

Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs

Articolo

Effects of ESD protections on latch-up sensitivity of CMOS 4-stripe structures

Articolo

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Articolo

Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric

Articolo

Effects of stair case gate bias stress in IGZO/Al2O3 flexible TFTs

Articolo

Electromigration in Thin-Films for Microelectronics

Articolo

Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation

Articolo

Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress

Articolo

Failure Analysis-assisted FMEA

Articolo

Failure analysis of RuO2 thick film chip resistors

Articolo

Failures induced by electromigration in ECL 100k devices

Articolo

Field plate related reliability improvements in GaN-on-Si HEMTs

Articolo

Gate oxide reliability improvement related to dry local oxidation of silicon

Articolo

Gate-lag effects in AlGaAs/GaAs power HFET's

Articolo

High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's

Articolo

High-k related reliability issues in advanced Non-Volatile Memories

Articolo

Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs

Articolo

Impact of the As dose in 0.35 mu m EEPROM technology: characterization and modeling

Articolo

Insights into the off-state breakdown mechanisms in power GaN HEMTs

Articolo

Investigation of information loss mechanisms in EPROMs

Articolo

Lifetime extrapolation for IGBT modules under realistic conditions

Articolo

Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs

Articolo

Microscopic scale characterization and modeling of transistor degradation under HC stress

Articolo

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Articolo

On the effect of power cycling stress on IGBT modules

Articolo

On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors

Articolo

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

Articolo

Parasitic effects and long term stability of InP-based HEMTs

Articolo

Power GaAs MESFET: reliability aspects and failure mechanisms

Articolo

Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs

Articolo

Reliability evaluation of plastic packaged devices for long life applications by THB test

Articolo

Reliability in automotive electronics: a case study applied to diesel engine control

Articolo

Reliability investigation of InGaP/GaAs HBTs under current and temperature stress

Articolo

Reliability of compound semiconductor devices

Articolo

Reliability physics of compound semiconductor transistors for microwave applications

Articolo

Reliability predictions in electronic industrial applications

Articolo

Reliability problems in TTL-LS devices

Articolo

Reliability problems with VLSI

Articolo

Resistance change due to Cu transport and precipitation during electromigration in submicrometric Al-0.5%Cu lines

Articolo

Reverse photolitographic technique for thicl-film circuits

Articolo

SEM-EDAX analysis of interaction of photoresist with thick-films

Articolo

Screen printed thick-film nickel-silicon interaction

Articolo

Study of degradation mechanisms in compound semiconductor based devices by SEM-cathodoluminescence

Articolo

Sulfur-contamination of high power white LED

Articolo

Technique for lifting off thick film printed on alumina

Articolo

Test structures and testing methods for electrostatic discharge: results of PROPHECY project

Articolo

Text fixture for MESFET reliability life tests

Articolo

The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS

Articolo

The thermally balanced bridge technique (TBBT): a new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes

Articolo

Thermal characterisation of IGBT power modules

Articolo

Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's

Articolo

Traps localization and analysis in GaN HEMTs

Articolo

Updating of CMOS reliability

Articolo

No Results Found

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