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Pubblicazioni
IEEE ELECTRON DEVICE LETTERS
Rivista
Codice:
E079839
ISSN:
0741-3106
Dati Generali
Dati Generali
Pubblicazioni (73)
Pulisci
Ordina Pubblicazioni:
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A CMOS, fully integrated sensor for electronic detection of DNA hybridization
Articolo
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM
Articolo
A Physical Model for Post-Breakdown Digital Gate Current Noise
Articolo
A Tunable Capacitance ReRAM for Improvement of Dynamic Range in CMOS Image Sensors
Articolo
A technique to extract high-k IPD stack layer thicknesses from C-V measurements
Articolo
An Empirical Model for RRAM Resistance in Low- and High-Resistance State
Articolo
Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs
Articolo
Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs
Articolo
Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics
Articolo
Charge Transport and Degradation in HfO2 and HfOx Dielectrics
Articolo
Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric
Articolo
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation
Articolo
Evidence of Substrate Enhanced High Energy Tails in the Distribution Function of Deep Submicron MOSFETs by Light Emission Measurements
Articolo
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Articolo
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs
Articolo
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal
Articolo
Extraction of Defects Properties in Dielectric Materials from I-V Curve Hysteresis
Articolo
Extraction of the Defect Distributions in DRAM Capacitor Using I-V and C-V Sensitivity Maps
Articolo
Flexible In-Ga-Zn-O Thin-Film Transistors on Elastomeric Substrate Bent to 2.3% Strain
Articolo
Flexible In-Ga-Zn-O based circuits with two and three metal layers: Simulation and Fabrication study
Articolo
Flexible InGaZnO TFTs With f(max) Above 300 MHz
Articolo
Flexible Quasi-Vertical In-Ga-Zn-O Thin-Film Transistor With 300-nm Channel Length
Articolo
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers
Articolo
Fullband quantization analysis reveals a third valley in (001) silicon inversion layers
Articolo
Gain-Tunable Complementary Common-Source Amplifier Based on a Flexible Hybrid Thin-Film Transistor Technology
Articolo
Gate metallization 'sinking' into the active channel in Ti/W/Au metallized power MESFET's
Articolo
Gate-Bias Induced RON Instability in p-GaN Power HEMTs
Articolo
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates
Articolo
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation
Articolo
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs
Articolo
Hot Hole Gate Current in Surface Channel p-MOSFETs
Articolo
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design
Articolo
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K
Articolo
Hot-electron-induced photon energies in n-channel MOSFET's operating at 77 and 300 K
Articolo
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures
Articolo
Identifying the First Layer to Fail in Dual Layer SiOx/HfSiON Gate Dielectric Stacks
Articolo
Impact of band structure on charge trapping in thin SiO2/Al2O3/Poly-Si gate stacks
Articolo
Increase in barrier height of Al/n-GaAs contacts induced by high current
Articolo
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs
Articolo
Influence of Semiconductor Island Geometry on the AC Performance of Flexible InGaZnO TFTs
Articolo
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
Articolo
Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices
Articolo
Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications
Articolo
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
Articolo
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs
Articolo
Minimizing thermal resistance and collector-to-substrate capacitance in graded base SiGe BiCMOS on SOI
Articolo
Modeling NAND Flash Memories for IC Design
Articolo
Modeling TANOS Memory Program Transients to Investigate Charge Trapping Dynamics
Articolo
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise
Articolo
Monte Carlo Simulation of Impact Ionization in SiGe HBTs
Articolo
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS
Articolo
NROM: A novel localized trapping, 2-bit nonvolatile memory cell
Articolo
Non-Local Effects in p-MOSFET Substrate Hot Hole Injection Experiments
Articolo
On the Apparent Mobility in Nanometric n-MOSFETs
Articolo
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers
Articolo
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's
Articolo
On the electrical monitor for device degradation in the CHISEL stress regime
Articolo
Oxide Thin-Film Electronics on Carbon Fiber Reinforced Polymer Composite
Articolo
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs
Articolo
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs
Articolo
Power and linearity characteristics of GaN MISFETs on sapphire substrate
Articolo
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs
Articolo
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs
Articolo
Temperature Dependence of Gate and Substrate Currents in the CHE Crossover Regime
Articolo
Temperature impact on the reset operation in HfO2 RRAM
Articolo
The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2O3 Layers
Articolo
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs
Articolo
Three dimensional distribution of CMOS Latch-up current
Articolo
Trap characterization in buried-gate n-channel 6H-SiC JFETs
Articolo
Trap energetic and spatial localization in buried-gate 6H-SiC JFETs by means of numerical device simulation
Articolo
Trapping Dynamics and Endurance in HfO2-FeFETs: An Insight From Charge Pumping
Articolo
Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications
Articolo
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)
Articolo
No Results Found
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